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Quantum tunneling in magnetic tunneling junctions

This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth...

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Autores Principales: Cruz de Gracia, Evgeni, Strazzabosco Dorneles, Lucio, Schelp, Luiz Fernando, Ribeiro Teixiera, Sérgio, Baibich, Mario Norberto
Formato: Artículo
Idioma: Español
Publicado: Universidad Tecnológica de Panamá 2012
Materias:
Electronic transport, junction, magnetization, tunneling
Acceso en línea: http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96
http://ridda2.utp.ac.pa/handle/123456789/2161
id RepoUTP2161
recordtype dspace
spelling RepoUTP21612019-12-06T14:50:41Z Quantum tunneling in magnetic tunneling junctions Cruz de Gracia, Evgeni Strazzabosco Dorneles, Lucio Schelp, Luiz Fernando Ribeiro Teixiera, Sérgio Baibich, Mario Norberto Electronic transport, junction, magnetization, tunneling This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth of the effective area-resistance product with the effective barrier thickness, and the concentration of the tunnel current in small areas of the junctions, were identified by fitting room temperature I-V curves, for each individual sample, with either Simmons’ [J. Appl. Phys. 34, 1793 (1963); 35, 2655 (1964); 34, 2581 (1963)] or Chow’s [J. Appl. Phys. 36, 559 (1965)] model. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution and showing quantum tunneling as the charge transport mechanism. This mechanism, is also, verified through I-T curves. 2012-06-29 2017-07-28T17:47:50Z 2017-07-28T17:47:50Z info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96 http://ridda2.utp.ac.pa/handle/123456789/2161 spa http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96/pdf http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96/html info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf text/html Universidad Tecnológica de Panamá 2219-6714 1680-8894 I+D Tecnológico; Vol. 8, Núm. 1 (2012): Revista I+D Tecnológico; 26-32
institution Universidad Tecnológica de Panamá
collection Repositorio UTP – Ridda2
language Español
topic Electronic transport, junction, magnetization, tunneling
spellingShingle Electronic transport, junction, magnetization, tunneling
Cruz de Gracia, Evgeni
Strazzabosco Dorneles, Lucio
Schelp, Luiz Fernando
Ribeiro Teixiera, Sérgio
Baibich, Mario Norberto
Quantum tunneling in magnetic tunneling junctions
description This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth of the effective area-resistance product with the effective barrier thickness, and the concentration of the tunnel current in small areas of the junctions, were identified by fitting room temperature I-V curves, for each individual sample, with either Simmons’ [J. Appl. Phys. 34, 1793 (1963); 35, 2655 (1964); 34, 2581 (1963)] or Chow’s [J. Appl. Phys. 36, 559 (1965)] model. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution and showing quantum tunneling as the charge transport mechanism. This mechanism, is also, verified through I-T curves.
format Artículo
author Cruz de Gracia, Evgeni
Strazzabosco Dorneles, Lucio
Schelp, Luiz Fernando
Ribeiro Teixiera, Sérgio
Baibich, Mario Norberto
author_sort Cruz de Gracia, Evgeni
title Quantum tunneling in magnetic tunneling junctions
title_short Quantum tunneling in magnetic tunneling junctions
title_full Quantum tunneling in magnetic tunneling junctions
title_fullStr Quantum tunneling in magnetic tunneling junctions
title_full_unstemmed Quantum tunneling in magnetic tunneling junctions
title_sort quantum tunneling in magnetic tunneling junctions
publisher Universidad Tecnológica de Panamá
publishDate 2012
url http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96
http://ridda2.utp.ac.pa/handle/123456789/2161
_version_ 1796209974926376960
score 12.041432

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