Vista Equipo: Characterization of shallow groundwater in Eocene sediments of Panama Canal Watershed using electrical techniques

Characterization of shallow groundwater in Eocene sediments of Panama Canal Watershed using electrical techniques

This work is focused on the detection of seepages caused by the affluent located in a small area of the Panama Canal Basin during the dry season, and to define the subsurface stratigraphy (Eocene sediments) that characterize this area through a geophysical survey. Two electrical resistivity tomograp...

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Autores Principales:	Díaz, Irving, Mojica Ábrego, Alexis, Ho, Carlos, Pinzón, Reinhardt, Fábrega, José, Vallester, Erick, Vega, David, Ogden, Fred, Hendrickx, Jan
Formato:	Artículo
Idioma:	Español
Publicado:	Universidad Tecnológica de Panamá 2012
Materias:	Apparent resistivity,electrical resistivity tomography,forward problem, Gamboa zone, inverse data, Panama Canal watershed, synthetic data
Acceso en línea:	http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/97 http://ridda2.utp.ac.pa/handle/123456789/1738

id	RepoUTP1738
recordtype	dspace
spelling	RepoUTP17382019-12-06T14:50:41Z Characterization of shallow groundwater in Eocene sediments of Panama Canal Watershed using electrical techniques Díaz, Irving Mojica Ábrego, Alexis Ho, Carlos Pinzón, Reinhardt Fábrega, José Vallester, Erick Vega, David Ogden, Fred Hendrickx, Jan Apparent resistivity,electrical resistivity tomography,forward problem, Gamboa zone, inverse data, Panama Canal watershed, synthetic data This work is focused on the detection of seepages caused by the affluent located in a small area of the Panama Canal Basin during the dry season, and to define the subsurface stratigraphy (Eocene sediments) that characterize this area through a geophysical survey. Two electrical resistivity tomography were developed to identify the extent of infiltration and the nature of the clay layers vertically and laterally, these results were corroborated by a drilling operation in the vicinity of electrical tests and based on this information, established a model for a two-dimensional geoelectric profile in order to compare (i) the pseudo-sections of synthetic and measured apparent electrical resistivity, and (ii) the electrical resistivity tomography as a result of the inversions of such pseudo-sections. The results of electrical resistivity tomography obtained in the two profiles revealed the existence of (i) a surface layer moderately resistant (18-85 ohm.m) with a thickness not exceeding 1,8 m, (ii) an area of high electrical conductivity (3,8 to 10,7 ohm.m) with a thickness not exceeding 9.5 m and (iii) a resistant substratum with electrical resistivity values calculated in excess of 30,1 ohm.m and a range depth ranging from 2 to 11,5 m. The drilling operation in the vicinity of the geophysical tests revealed the presence of clay with varying moisture content and density, and thicknesses that corroborate the results of the geophysical evidence. The two-dimensional geoelectrical model of Profile 1 was established according to the results of electrical resistivity tomography as well as the profile and information of the drilling operation. Based on the results of this study, we conclude that the infiltrations generated by the affluent in this part of the Isthmus of Panama are very important, even in periods when precipitation levels are. 2012-06-29 2017-07-28T13:56:58Z 2017-07-28T13:56:58Z info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/97 http://ridda2.utp.ac.pa/handle/123456789/1738 spa http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/97/pdf http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/97/html_1 info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf text/html Universidad Tecnológica de Panamá 2219-6714 1680-8894 I+D Tecnológico; Vol. 8, Núm. 1 (2012): Revista I+D Tecnológico; 33-42
institution	Universidad Tecnológica de Panamá
collection	Repositorio UTP – Ridda2
language	Español
topic	Apparent resistivity,electrical resistivity tomography,forward problem, Gamboa zone, inverse data, Panama Canal watershed, synthetic data
spellingShingle	Apparent resistivity,electrical resistivity tomography,forward problem, Gamboa zone, inverse data, Panama Canal watershed, synthetic data Díaz, Irving Mojica Ábrego, Alexis Ho, Carlos Pinzón, Reinhardt Fábrega, José Vallester, Erick Vega, David Ogden, Fred Hendrickx, Jan Characterization of shallow groundwater in Eocene sediments of Panama Canal Watershed using electrical techniques
description	This work is focused on the detection of seepages caused by the affluent located in a small area of the Panama Canal Basin during the dry season, and to define the subsurface stratigraphy (Eocene sediments) that characterize this area through a geophysical survey. Two electrical resistivity tomography were developed to identify the extent of infiltration and the nature of the clay layers vertically and laterally, these results were corroborated by a drilling operation in the vicinity of electrical tests and based on this information, established a model for a two-dimensional geoelectric profile in order to compare (i) the pseudo-sections of synthetic and measured apparent electrical resistivity, and (ii) the electrical resistivity tomography as a result of the inversions of such pseudo-sections. The results of electrical resistivity tomography obtained in the two profiles revealed the existence of (i) a surface layer moderately resistant (18-85 ohm.m) with a thickness not exceeding 1,8 m, (ii) an area of high electrical conductivity (3,8 to 10,7 ohm.m) with a thickness not exceeding 9.5 m and (iii) a resistant substratum with electrical resistivity values calculated in excess of 30,1 ohm.m and a range depth ranging from 2 to 11,5 m. The drilling operation in the vicinity of the geophysical tests revealed the presence of clay with varying moisture content and density, and thicknesses that corroborate the results of the geophysical evidence. The two-dimensional geoelectrical model of Profile 1 was established according to the results of electrical resistivity tomography as well as the profile and information of the drilling operation. Based on the results of this study, we conclude that the infiltrations generated by the affluent in this part of the Isthmus of Panama are very important, even in periods when precipitation levels are.
format	Artículo
author	Díaz, Irving Mojica Ábrego, Alexis Ho, Carlos Pinzón, Reinhardt Fábrega, José Vallester, Erick Vega, David Ogden, Fred Hendrickx, Jan
author_sort	Díaz, Irving
title	Characterization of shallow groundwater in Eocene sediments of Panama Canal Watershed using electrical techniques
title_short	Characterization of shallow groundwater in Eocene sediments of Panama Canal Watershed using electrical techniques
title_full	Characterization of shallow groundwater in Eocene sediments of Panama Canal Watershed using electrical techniques
title_fullStr	Characterization of shallow groundwater in Eocene sediments of Panama Canal Watershed using electrical techniques
title_full_unstemmed	Characterization of shallow groundwater in Eocene sediments of Panama Canal Watershed using electrical techniques
title_sort	characterization of shallow groundwater in eocene sediments of panama canal watershed using electrical techniques
publisher	Universidad Tecnológica de Panamá
publishDate	2012
url	http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/97 http://ridda2.utp.ac.pa/handle/123456789/1738
_version_	1796210332961603584
score	12.231669

Characterization of shallow groundwater in Eocene sediments of Panama Canal Watershed using electrical techniques

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