Descripción: A WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator array

Imagen de Portada

Código QR

A WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator array

A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10-12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.

Autor Principal:	Rimolo-Donadio, Renato
Formato:	Objeto de conferencia
Idioma:	Inglés
Publicado:	OSA - The Optical Society 2017
Materias:	Fibra óptica CMOS Moduladores Comunicación óptica Transferencia de datos Research Subject Categories::TECHNOLOGY::Electrical engineering, electronics and photonics::Electrical engineering
Acceso en línea:	https://www.scopus.com/inward/record.url?eid=2-s2.0-84930885978&partnerID=40&md5=dc087fa56741496a301cd372bd63ad7d https://hdl.handle.net/2238/6942

Sumario:	A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10-12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.