A WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator array
A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10-12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.
Autor Principal: | Rimolo-Donadio, Renato |
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Formato: | Objeto de conferencia |
Idioma: | Inglés |
Publicado: |
OSA - The Optical Society
2017
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Materias: | |
Acceso en línea: |
https://www.scopus.com/inward/record.url?eid=2-s2.0-84930885978&partnerID=40&md5=dc087fa56741496a301cd372bd63ad7d https://hdl.handle.net/2238/6942 |
Sumario: |
A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10-12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power. |
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